| ‘lllvV|sHAY? SS1 OPH457 Www'ViShay'C°m Vishay General SemiconductorHigh current Density surface Mount schottky Rectifier ? _ FEATURES /J3eSMP Serles . . . Aummnnve- Very low profile — typical height of 1.1 mm A ‘QSADE 0 Ideal for automated placement 0 Guardring for overvoltage protection ? . High barrier technology, Ty : 175 DC maximum ROHS Low leakage current CDMPLIANT Meets MSL level 1, per J-STD-020, ?gLF maximum peak of 260 “C AEC>Q101 qualified K Ame‘ 0 Material categorization: For definitions of compliance CElh:)?:l<—|:: please see www.viShay.com/doc?99912Anode 2 To—277A (SMPC) MEcHANIcAL DATAPRIMARY cHARAcTERIs Ics case: To-277A (SMPC) Base P/N?M3 — halogen—free, FtoHS?compliant, andBase P/NHM3 — halogen—Iree, RoHS—compIIant, andTerminals: Matte tin plated leads, solderable per T °°mmerCia' grade T automoiive grade T-_m J_STD.0o2 and JESD 22.B102 mm M3 suffix meets JESD 201 class 2 whisker test, HM3 Suffix meets JESD 201 class 2 whisker test TYPICAL APPLIcATIoNs For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or MAXIMUM RATINGS (TA _ 5 DC unless otherwise noted) ....mM.... Mo.dingCompoundmeetsUL94V.0r.ammabi.i1yrating llllmmllll llllmmllll IIIIEEIIII llmmm?mallllllmellll polarity protection application. mwmmemeeeeawellllllll Peak fonn/ard surge current 10 ms single half sine-waveRevision: 02-Aug-13 1 Document Number: 89057 superimposed on rated loadNon-repetitive avalanche energy at IAS : 2 A , TJ : 25 °C Operating junction and storage temperature range Maximum average fonlvard rectified current (fig. 1) For technical questions within your region: DiodesArnericas@vishay.corn, DiodesAsia@vishay.com, DiodesEurope@Vishay.com THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vlshay.comzdoc?91000 |